APT56M50L Microsemi Power Products Group, APT56M50L Datasheet

APT56M50L

Manufacturer Part Number

APT56M50L

Description

MOSFET N-CH 500V 56A TO-264

Manufacturer

Microsemi Power Products Group

Datasheet

1.APT56M50L.pdf (4 pages)

Specifications of APT56M50L

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

100 mOhm @ 28A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

56A

Vgs(th) (max) @ Id

5V @ 2.5mA

Gate Charge (qg) @ Vgs

220nC @ 10V

Input Capacitance (ciss) @ Vds

8800pF @ 25V

Power - Max

780W

Mounting Type

Through Hole

Package / Case

TO-264

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

APT56M50LMI
APT56M50LMI

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

APT56M50L

Manufacturer:

Microsemi Power Products Group

Quantity:

135

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Absolute Maximum Ratings

Thermal and Mechanical Characteristics

Symbol

Torque

Power MOS 8

A proprietary planar stripe design yields excellent reliability and manufacturability. Low

switching loss is achieved with low input capacitance and ultra low C

tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure

help control slew rates during switching, resulting in low EMI and reliable paralleling,

even when switching at very high frequency. Reliability in ﬂyback, boost, forward, and

other circuits is enhanced by the high avalanche energy capability.

FEATURES

• Fast switching with low EMI/RFI

• Low R

• Ultra low C

• Low gate charge

• Avalanche energy rated

• RoHS compliant

θ CS

θ JC

STG

DS(on)

Parameter

Continuous Drain Current @ T

Pulsed Drain Current

Gate-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current, Repetitive or Non-Repetitive

Characteristic

Total Power Dissipation @ T

Junction to Case Thermal Resistance

Case to Sink Thermal Resistance, Flat, Greased Surface

Operating and Storage Junction Temperature Range

Soldering Temperature for 10 Seconds (1.6mm from case)

Package Weight

Mounting Torque ( TO-264 Package), 4-40 or M3 screw

™

rss

is a high speed, high voltage N-channel switch-mode power MOSFET.

for improved noise immunity

N-Channel MOSFET

= 25°C

Microsemi Website - http://www.microsemi.com

= 25°C

= 100°C

TYPICAL APPLICATIONS

• PFC and other boost converter

• Buck converter

• Two switch forward (asymmetrical bridge)

• Single switch forward

• Flyback

• Inverters

rss

"Miller" capaci-

Min

-55

APT56M50B2

Single die MOSFET

Ratings

APT56M50B2

500V, 56A, 0.10Ω Max

Typ

T-Max

0.11

0.22

1200

±30

6.2

175

APT56M50L

Max

0.16

780

150

300

1.1

TO-264

APT56M50L

°C/W

in·lbf

Unit

N·m

°C

Related parts for APT56M50L

APT56M50L Summary of contents

Page 1

... Two switch forward (asymmetrical bridge) • Single switch forward • Flyback • Inverters = 25° 100° 25°C C Microsemi Website - http://www.microsemi.com APT56M50B2 APT56M50L 500V, 56A, 0.10Ω Max T-Max TM TO-264 APT56M50B2 APT56M50L D Single die MOSFET G S Ratings Unit 175 ±30 V 1200 Min Typ ...

Page 2

Symbol Parameter V Drain-Source Breakdown Voltage BR(DSS) ∆V /∆T Breakdown Voltage Temperature Coefﬁcient BR(DSS Drain-Source On Resistance DS(on) V Gate-Source Threshold Voltage GS(th) ∆V /∆T Threshold Voltage Temperature Coefﬁcient GS(th Zero Gate Voltage Drain Current DSS ...

Page 3

V = 10V -55° 25° 125°C J NORMALIZED 10V @ 28A GS = 7,8 & 10V 4.5V V > MAX. DS ...

Page 4

I DM 13µs 100µs 1ms R ds(on) 10ms 100ms DC line Dissipated Power (Watts 0.9 0.7 0.5 0.3 0.1 0.05 T-MAX™ (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 20.80 (.819) 21.46 (.845) 0.40 (.016) ...

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