APT56M50L Microsemi Power Products Group, APT56M50L Datasheet - Page 4

• Manufacturer Part Number: APT56M50L
• Description: MOSFET N-CH 500V 56A TO-264
• Manufacturer: Microsemi Power Products Group

Specifications of APT56M50L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 28A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 56A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 8800pF @ 25V
• Power - Max: 780W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT56M50LMI; APT56M50LMI

Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
Dissipated Power
R ds(on)
I
DM
D = 0.9
T-MAX™ (B2) Package Outline
These dimensions are equal to the TO-247 without the mounting hole.
0.7
0.3
0.1
(Watts)
0.5
0.05
13µs
100µs
10ms
100ms
1ms
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
DC line
Dimensions in Millimeters and (Inches)
20.80 (.819)
21.46 (.845)
19.81 (.780)
20.32 (.800)
T
J
4.50 (.177) Max.
(°C)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
0.000713
2-Plcs.
0.0337
SINGLE PULSE
15.49 (.610)
16.26 (.640)
0.0189
e3 100% Sn Plated
0.0687
5.38 (.212)
6.20 (.244)
1.65 (.065)
2.13 (.084)
2.87 (.113)
3.12 (.123)
Gate
Drain
Source
0.527
0.0575
T
C
TO-264 (L) Package Outline
(°C)
Dimensions in Millimeters and (Inches)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Scaling for Different Case & Junction
Temperatures:
I
D
I
DM
=
25.48 (1.003)
26.49 (1.043)
19.81 (.780)
21.39 (.842)
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
R ds(on)
EXT
I
D(T
are the external thermal
C
5.79 (.228)
6.20 (.244)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
5.45 (.215) BSC
= 25
Note:
Peak T J = P DM x Z θJC + T C
2.79 (.110)
3.18 (.125)
2-Plcs.
°
13µs
C)
100µs
Duty Factor D =
*(
t
1
T
= Pulse Duration
J
19.51 (.768)
20.50 (.807)
10ms
100ms
-
t 1
T
C
)/125
t 2
t 1
/
t 2
3.10 (.122)
3.48 (.137)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source