2SK3565(Q,M) Toshiba, 2SK3565(Q,M) Datasheet - Page 2
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2SK3565(Q,M)
Manufacturer Part Number
2SK3565(Q,M)
Description
MOSFET N-CH 900V 5A TO-220SIS
Manufacturer
Toshiba
Datasheet
1.2SK3565QM.pdf
(6 pages)
Specifications of 2SK3565(Q,M)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
1150pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
2-10U1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SK3565(Q)
2SK3565(Q)
2SK3565Q
2SK3565Q
2SK3565QM
2SK3565(Q)
2SK3565Q
2SK3565Q
2SK3565QM
Electrical Characteristics
Source-Drain Ratings and Characteristics
Marking
Gate leakage current
Gate-source breakdown voltage
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
Gate-source charge
Gate-drain charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
K3565
Characteristics
Characteristics
Rise time
Turn-on time
Fall time
Turn-off time
Part No. (or abbreviation code)
Lot No.
Note 4
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
⎪
I
I
DRP
Q
DSF
DR
t
rr
rr
Note 4: A line under a Lot No. identifies the indication of product
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.
V
I
V
I
V
V
V
V
V
G
D
Duty ≤ 1%, t
GS
DS
DS
GS
DS
DS
DD
V
=±10 μA, V
= 10 mA, V
GS
I
I
dI
DR
DR
= 720 V, V
= 10 V, I
= 20 V, I
= 25 V, V
10 V
= ±25 V, V
= 10 V, I
∼ − 400 V, V
DR
0 V
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
2
= 5 A, V
= 5 A, V
(Ta = 25°C)
/dt = 100 A/μs
50 Ω
Test Condition
D
D
D
w
DS
GS
GS
Test Condition
GS
= 1 mA
= 3 A
DS
= 3 A
GS
= 10 μs
GS
GS
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 10 V, I
I
= 0 V
= 0 V,
D
⎯
⎯
= 3 A
V
DD
D
= 5 A
R
∼ − 200 V
V
L
OUT
66.7 Ω
=
900
Min
±30
Min
2.0
2.0
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1150
Typ.
Typ.
100
170
900
2.0
4.5
5.4
20
30
70
60
28
17
11
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
2009-09-29
2SK3565
−1.7
Max
Max
±10
100
4.0
2.5
⎯
⎯
⎯
⎯
⎯
15
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5
Unit
Unit
nC
μC
μA
μA
pF
ns
ns
Ω
V
V
V
S
A
A
V