2SK3565(Q,M) Toshiba, 2SK3565(Q,M) Datasheet - Page 3

• Manufacturer Part Number: 2SK3565(Q,M)
• Description: MOSFET N-CH 900V 5A TO-220SIS
• Manufacturer: Toshiba

Specifications of 2SK3565(Q,M)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1150pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: 2-10U1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2SK3565(Q); 2SK3565(Q); 2SK3565Q; 2SK3565Q; 2SK3565QM

0.1
10
10
5
4
3
2
1
0
8
6
4
2
0
1
0.1
0
0
COMMON
SOURCE
Tc = 25°C
PULSE TEST
COMMON SOURCE
V DS = 20 V
PULSE TEST
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
4
2
DRAIN CURRENT I
100
8
10
4
⎪Y
I
8
I
D
D
Tc = −55°C
fs
– V
– V
12
⎪ – I
1
DS
GS
D
100
6
25
Tc = −55°C
COMMON SOURCE
V DS = 20 V
PULSE TEST
16
6
D
GS
(A)
DS
V GS = 4.5 V
25
8
20
5.5
5.25
4.75
(V)
(V)
5
24
10
10
3
20
14
12
10
0.01
6
5
4
3
2
1
0
8
4
0
5
3
1
0
0
COMMON
SOURCE
Tc = 25°C
PULSE TEST
DRAIN-SOURCE VOLTAGE V
GATE-SOURCE VOLTAGE V
COMMON SOURCE
Tc = 25°C
PULSE TEST
4
DRAIN CURRENT I
10
0.1
R
V GS = 10 V､15V
V
DS (ON)
10
8
I
DS
D
– V
– V
DS
6
GS
– I
12
I D = 5 A
COMMON SOURCE
Tc = 25℃
PULSE TEST
D
20
1
D
8
V GS = 4 .5V
GS
(A)
DS
3
16
1.5
5.5
5.25
4.75
(V)
2009-09-29
5
(V)
2SK3565
30
20
10