2SK3565(Q,M) Toshiba, 2SK3565(Q,M) Datasheet - Page 5
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2SK3565(Q,M)
Manufacturer Part Number
2SK3565(Q,M)
Description
MOSFET N-CH 900V 5A TO-220SIS
Manufacturer
Toshiba
Datasheet
1.2SK3565QM.pdf
(6 pages)
Specifications of 2SK3565(Q,M)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
28nC @ 10V
Input Capacitance (ciss) @ Vds
1150pF @ 25V
Power - Max
45W
Mounting Type
Through Hole
Package / Case
2-10U1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
2SK3565(Q)
2SK3565(Q)
2SK3565Q
2SK3565Q
2SK3565QM
2SK3565(Q)
2SK3565Q
2SK3565Q
2SK3565QM
0.01
100
0.1
10
1
1
I D max (CONTINUOUS) *
DC OPERATION
※ SINGLE NONREPETITIVE PULSE
Tc=25℃
CURVES
LINEARLY
TEMPERATURE.
I D max (PULSED) *
Tc = 25°C
ドレイン・ソース間電圧 V
MUST
SAFE OPERATING AREA
0.001
WITH
10
0.01
0.1
10
10μ
1
BE
INCREASE
0.02
0.05
0.1
DERATED
Duty=0.5
100
0.2
1 ms *
0.01
IN
100μ
100 μs *
1000
DS
V DSS max
SINGLE PULSE
(V)
1m
10000
PULSE WIDTH t
r
5
th
10m
– t
w
R
V
G
DD
w
= 25 Ω
1000
= 90 V, L = 43.6mH
800
600
400
200
(s)
−15 V
0
100m
15 V
25
TEST CIRCUIT
CHANNEL TEMPERATURE (INITIAL)
P DM
P DM
50
Duty = t/T
Duty = t/T
R th (ch-c) = 1.25°C/W
R th (ch-c) = 2.78°C/W
1
t
t
T
T
75
E
T
AS
ch
Ε AS
– T
V
(°C)
DD
=
ch
100
WAVE FORM
B
10
1
2
VDSS
I
⋅
AR
L
⋅
2 I
⋅
125
⎛
⎜
⎜
⎝
2009-09-29
B VDSS
2SK3565
V
DS
B VDSS
150
−
V DD
⎞
⎟
⎟
⎠