2N7000_D26Z Fairchild Semiconductor, 2N7000_D26Z Datasheet
2N7000_D26Z
Specifications of 2N7000_D26Z
2N7000_D26ZTR
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2N7000_D26Z Summary of contents
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... Maximum Lead Temperature for Soldering L Purposes, 1/16" from Case for 10 Seconds THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient R JA © 1997 Fairchild Semiconductor Corporation Features High density cell design for low R Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. (TO-236AB) ...
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Electrical Characteristics T A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate - Body Leakage, Forward GSSF I Gate - Body Leakage, Reverse GSSR ON CHARACTERISTICS (Note 1) V Gate ...
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Electrical Characteristics T A Symbol Parameter ON CHARACTERISTICS Continued (Note 1) I On-State Drain Current D(ON) g Forward Transconductance FS DYNAMIC CHARACTERISTICS C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss t Turn-On Time on t ...
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Typical Electrical Characteristics 10V GS 9 DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics 10V GS 1. 500m A D 1.5 ...
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Typical Electrical Characteristics 1 250µA D 1.075 1.05 1.025 1 0.975 0.95 0.925 -50 - JUNCTION TEM PERATURE (°C) J Figure 7. Breakdown Voltage Variation with Temperature ...
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Typical Electrical Characteristics 0.5 0.1 0. 10V GS SINGLE PULSE T = 25°C A 0.01 0.005 DRAIN-SOURCE VOLTAGE (V) DS Figure 13. 2N7000 Maximum Safe Operating Area 3 2 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...