TPCF8102(TE85L,F) Toshiba, TPCF8102(TE85L,F) Datasheet - Page 2

• Manufacturer Part Number: TPCF8102(TE85L,F)
• Description: MOSFET P-CH 20V 6A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8102(TE85L,F)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 19nC @ 5V
• Input Capacitance (ciss) @ Vds: 1550pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1A)
• Configuration: Single Hex Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 6 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCF8102(TE85L,F); TPCF8102FTR

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristics
Characteristics
Pulse (Note 1)
Rise time
Turn-on time
Fall time
Turn-off time
(Ta = 25°C)
Symbol
V
I
DRP
DSF
V
V
R
R
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
DS (ON)
DS (ON)
I
I
C
|Y
C
C
Q
GSS
Q
DSS
V
t
t
Q
oss
on
off
rss
t
t
iss
gs
gd
I
th
fs
r
f
g
DR
|
= −6.0 A, V
V
V
I
I
V
V
V
V
V
V
Duty < = 1%, t
V
I
D
D
D
V
GS
DS
DS
GS
GS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
= −6.0 A
GS
2
(Ta = 25°C)
= −20 V, V
= −10 V, I
= −10 V, I
= −10 V, V
= ±8 V, V
= −1.8 V, I
= −2.5 V, I
= −4.5 V, I
∼ − −16 V, V
−5 V
Test Condition
GS
0 V
= 0 V
Test Condition
w
⎯
DS
D
D
= 10 µs
GS
GS
D
D
D
GS
GS
GS
= −200 µA
= −3.0 A
= −1.5 A
= −3.0 A
= −3.0 A
= 0 V
= 0 V
= 8 V
= 0 V
= 0 V, f = 1 MHz
= −5 V,
V
I
D
DD
= −3.0 A
∼ − −10 V
V
OUT
−0.5
Min
Min
−20
−12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
7
1550
Typ.
Typ.
215
265
⎯
⎯
⎯
⎯
⎯
67
36
24
14
13
21
68
19
14
⎯
⎯
7
5
TPCF8102
2006-11-16
Max
−1.2
Max
−24
±10
−10
1.2
90
41
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
µA
µA
pF
nC
ns
V
V
S
A
V