TPCF8102(TE85L,F) Toshiba, TPCF8102(TE85L,F) Datasheet - Page 4

• Manufacturer Part Number: TPCF8102(TE85L,F)
• Description: MOSFET P-CH 20V 6A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8102(TE85L,F)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 19nC @ 5V
• Input Capacitance (ciss) @ Vds: 1550pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1A)
• Configuration: Single Hex Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 6 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCF8102(TE85L,F); TPCF8102FTR

−10
100
0.1
−5
−4
−3
−2
−1
−8
−6
−4
−2
10
−0.1
0
0
1
0
0
−4.5
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
−5
−0.2
−0.5
Drain-source voltage V
Gate-source voltage V
Ta = 25°C
−2.5
Drain current I
Ta = 100°C
−1
−4
−1.9
−0.4
Ta = 25°C
−1.0
−3
I
I
|Y
D
D
Ta = −55°C
−2
fs
Ta = 100°C
– V
– V
| – I
−1.8
DS
GS
−0.6
−1.5
D
D
Common source
Ta = 25°C Pulse test
−10
GS
Ta = −55°C
DS
(A)
V GS = −1.4 V
(V)
(V)
−0.8
−2.0
−1.7
−1.6
−1.5
−100
−1.0
−2.5
4
1000
−0.5
−0.4
−0.3
−0.2
−0.1
−10
100
−8
−6
−4
−2
10
−0.1
0
0
1
0
0
Common source
Ta = 25°C
Pulse test
−2.5
−4
−3
−1
−2
Drain-source voltage V
Gate-source voltage V
−5
−2
Drain current I
−1
R
−2
V
−4
DS (ON)
−1.8 V
I
DS
D
– V
– V
V GS = −4.5 V
DS
GS
– I
−3
−6
D
−2.5 V
Common source
Ta = 25°C Pulse test
D
−10
Common source
Ta = 25°C
Pulse test
GS
DS
(A)
V GS = −1.4 V
(V)
(V)
−4
−8
I D = −6 A
TPCF8102
−1.8
−1.7
−1.6
−1.5
−1.5 A
2006-11-16
−3 A
−1.9
−100
−10
−5