TPCF8102(TE85L,F) Toshiba, TPCF8102(TE85L,F) Datasheet - Page 3

• Manufacturer Part Number: TPCF8102(TE85L,F)
• Description: MOSFET P-CH 20V 6A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8102(TE85L,F)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 3A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 19nC @ 5V
• Input Capacitance (ciss) @ Vds: 1550pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1A)
• Configuration: Single Hex Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.03 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: 6 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCF8102(TE85L,F); TPCF8102FTR

Marking
(or abbreviation code)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
Note 3: V
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
Note 5:
(Note 5)
A dot on the lower left of the marking indicates Pin 1.
Part No.
DD
Pin #1
= −16 V, T
Lot code (month)
(a)
F3B
Lot code
ch
(year)
= 25°C (initial), L = 0.5 mH, R
25.4 × 25.4 × 0.8
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot No.
FR-4
Unit: (mm)
Product-specific code
3
G
= 25 Ω, I
(b) Device mounted on a glass-epoxy board (b)
AR
= −3.0 A
(b)
25.4 × 25.4 × 0.8
FR-4
Unit: (mm)
TPCF8102
2006-11-16