FDV304P_D87Z Fairchild Semiconductor, FDV304P_D87Z Datasheet
FDV304P_D87Z
Manufacturer Part Number
FDV304P_D87Z
Description
MOSFET P-CH 25V 0.46A SOT-23
Manufacturer
Fairchild Semiconductor
Specifications of FDV304P_D87Z
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1.1 Ohm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
460mA
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
1.5nC @ 4.5V
Input Capacitance (ciss) @ Vds
63pF @ 10V
Power - Max
350mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Symbol
V
V
I
P
T
ESD
THERMAL CHARACTERISTICS
R
© 1997 Fairchild Semiconductor Corporation
D
FDV304P
Digital FET, P-Channel
This P-Channel enhancement mode field effect transistors is
produced using Fairchild's proprietary, high cell density, DMOS
technology. This very high density process is tailored to minimize
on-state resistance at low gate drive conditions. This device is
designed especially for application in battery power applications
such as notebook computers and cellular phones. This device
has excellent on-state resistance even at gate drive voltages as
low as 2.5 volts.
Absolute Maximum Ratings
General Description
DSS
GSS
D
J
,T
JA
STG
Mark:304
SOT-23
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Temperature Range
Electrostatic Discharge Rating MIL-STD-883D
Human Body Model (100pf / 1500 Ohm)
Thermal Resistance, Junction-to-Ambient
SuperSOT
TM
- Continuous
- Pulsed
-6
T
A
= 25
o
C unless other wise noted
SuperSOT
TM
-8
Features
-25 V, -0.46 A continuous, -1.5 A Peak.
Very low level gate drive requirements allowing direct
operation in 3V circuits. V
Gate-Source Zener for ESD ruggedness.
>6kV Human Body Model
Compact industry standard SOT-23 surface mount
package.
SO-8
R
R
DS(ON)
DS(ON)
G
-55 to 150
FDV304P
= 1.5
= 1.1
-0.46
0.35
-1.5
357
6.0
-25
-8
SOT-223
D
@ V
@ V
GS(th)
GS
GS
< 1.5V.
= -2.7 V.
= -4.5 V
S
August 1997
SOIC-16
FDV304P Rev.E
Units
°C/W
°C
kV
W
V
V
A
1
Related parts for FDV304P_D87Z
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
MOSFET P-CH 25V 460MA SOT-23
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FDV304P_D87Z Summary of contents
Page 1
... Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient R JA © 1997 Fairchild Semiconductor Corporation Features -25 V, -0.46 A continuous, -1.5 A Peak. Very low level gate drive requirements allowing direct operation in 3V circuits. V Gate-Source Zener for ESD ruggedness. ...
Page 2
Electrical Characteristics (T A Symbol Parameter OFF CHARACTERISTICS BV Drain-Source Breakdown Voltage DSS Breakdown Voltage Temp. Coefficient DSS J Zero Gate Voltage Drain Current I DSS I Gate - Body Leakage Current GSS ON CHARACTERISTICS (Note) Gate ...
Page 3
Typical Electrical Characteristics -1 -4.5V GS -3.5 -3.0 -1.25 -2.7 -2.5 -1 -0.75 -2.0 -0.5 -0. DRAIN-SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -0.25A ...
Page 4
Typical Electrical And Thermal Characteristics -0.25A 0.2 0.4 0.6 0 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics 0.5 0.1 ...