FQU4N50TU_WS Fairchild Semiconductor, FQU4N50TU_WS Datasheet - Page 2
![MOSFET N-CH 500V 2.6A IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
FQU4N50TU_WS
Manufacturer Part Number
FQU4N50TU_WS
Description
MOSFET N-CH 500V 2.6A IPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQU4N50TU_WS.pdf
(9 pages)
Specifications of FQU4N50TU_WS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.7 Ohm @ 1.3A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
2.6A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
460pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2.7 Ohms
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.6 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2009 Fairchild Semiconductor Internati
Rev. A2, January 2009