FDD4685_F085 Fairchild Semiconductor, FDD4685_F085 Datasheet
FDD4685_F085
Specifications of FDD4685_F085
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FDD4685_F085 Summary of contents
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... Thermal Resistance, Junction to Case θJC R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDD4685 FDD4685 ©2006 Fairchild Semiconductor Corporation FDD4685 Rev.B ® MOSFET General Description = –8.4A This P-Channel MOSFET has been produced using Fairchild D Semiconductor’s proprietary PowerTrench = –7A ...
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Electrical Characteristics Symbol Parameter Off Characteristics BV Drain to Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate to Source Leakage Current GSS On Characteristics (Note 2) V ...
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Typical Characteristics 100 PULSE DURATION = 80 µ s DUTY CYCLE = 0.5%MAX -10V DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On Region Characteristics 1.8 I ...
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Typical Characteristics -10V GATE CHARGE(nC) g Figure 7. Gate Charge Characteristics 125 0.01 ...
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Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 SINGLE PULSE 1E FDD4685 Rev 25°C unless otherwise noted RECTANGULAR PULSE ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ GlobalOptoisolator™ Bottomless™ GTO™ Build it Now™ HiSeC™ ...