FQB5N50CTM Fairchild Semiconductor, FQB5N50CTM Datasheet - Page 3

• Manufacturer Part Number: FQB5N50CTM
• Description: MOSFET N-CH 500V 5A A.D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB5N50CTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.4 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 625pF @ 25V
• Power - Max: 73W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.4 Ohms
• Forward Transconductance Gfs (max / Min): 5.2 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5 A
• Power Dissipation: 73 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
1200
1000
800
600
400
200
10
10
10
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
-1
10
1
0
10
Figure 5. Capacitance Characteristics
-1
-1
0
Figure 3. On-Resistance Variation vs
Top :
Bottom : 5.0 V
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10.0 V
15.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
GS
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
5
10
10
I
D
0
0
, Drain Current [A]
C
C
C
oss
iss
rss
V
GS
= 10V
10
C
C
C
iss
oss
rss
= C
= C
10
※ Notes :
10
= C
1. 250μ s Pulse Test
2. T
※ Note : T
1
1
gs
gd
ds
+ C
+ C
C
= 25℃
gd
gd
V
(C
※ Notes ;
GS
1. V
2. f = 1 MHz
ds
J
= 25 ℃
= shorted)
= 20V
GS
= 0 V
15
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0.2
0
2
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
25
Variation with Source Current
o
C
0.4
150
150℃
o
C
5
4
V
V
and Temperature
Q
GS
SD
V
0.6
G
, Source-Drain voltage [V]
DS
, Gate-Source Voltage [V]
V
, Total Gate Charge [nC]
DS
V
= 400V
DS
= 250V
25℃
= 100V
-55
o
0.8
10
C
6
1.0
※ Notes :
1. V
2. 250 μ s Pulse Test
※ Notes :
1. V
2. 250 μ s Pulse Test
DS
※ Note : I
15
8
= 40V
GS
= 0V
1.2
D
= 5A
Rev. A1, Oct 2008
1.4
10
20