FQP32N20C_F080 Fairchild Semiconductor, FQP32N20C_F080 Datasheet

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FQP32N20C_F080

Manufacturer Part Number
FQP32N20C_F080
Description
MOSFET N-CH 200V 28A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQP32N20C_F080

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
82 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
2200pF @ 25V
Power - Max
156W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.082 Ohms
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
28 A
Power Dissipation
156 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2004 Fairchild Semiconductor Corporation
FQP32N20C/FQPF32N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supplies and motor controls.
Absolute Maximum Ratings
* Drain current limited by maximum junction temperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θJS
θJA
, T
STG
G
D
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
TO-220
FQP Series
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
T
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
G
D
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 28A, 200V, R
• Low gate charge ( typical 82.5 nC)
• Low Crss ( typical 185 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
TO-220F
FQPF Series
FQP32N20C
FQP32N20C
DS(on)
28.0
17.8
1.25
62.5
112
156
0.8
0.5
-55 to +150
= 0.082Ω @V
± 30
28.0
15.6
200
955
300
5.5
FQPF32N20C
FQPF32N20C
G
28.0 *
17.8 *
112 *
2.51
62.5
0.4
50
--
QFET
GS
= 10 V
D
S
Units
Units
Rev. A, March 2004
W/°C
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
®

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FQP32N20C_F080 Summary of contents

Page 1

... Thermal Resistance, Junction-to-Case θJC R Thermal Resistance, Case-to-Sink Typ. θJS R Thermal Resistance, Junction-to-Ambient θJA ©2004 Fairchild Semiconductor Corporation Features • 28A, 200V, R • Low gate charge ( typical 82.5 nC) • Low Crss ( typical 185 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability ...

Page 2

... G ≤ 28A, di/dt ≤ 300A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature ©2004 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µA, Referenced to 25°C ...

Page 3

... Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 6000 5000 4000 C iss 3000 C oss C 2000 rss ※ Notes : 1000 MHz Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2004 Fairchild Semiconductor Corporation ※ Notes : 1. 250µ s Pulse Test ℃ Figure 2. Transfer Characteristics 20V GS ※ ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 9-1. Maximum Safe Operating Area for FQP32N20C Case Temperature [ ] C Figure 10. Maximum Drain Current vs Case Temperature ©2004 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 Notes : ※ 0 250 µA D 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation ...

Page 5

... Typical Characteristics Figure 11-1. Transient Thermal Response Curve for FQP32N20C Figure 11-2. Transient Thermal Response Curve for FQPF32N20C ©2004 Fairchild Semiconductor Corporation (Continued) ※ θ ※ ℃ θ ℃ θ θ Rev. A, March 2004 ...

Page 6

... Resistive Switching Test Circuit & Waveforms 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2004 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT DUT DUT ...

Page 7

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2004 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 8

... Package Dimensions ©2004 Fairchild Semiconductor Corporation TO - 220 Dimensions in Millimeters Rev. A, March 2004 ...

Page 9

... Package Dimensions 10.16 (7.00) MAX1.47 0.80 0.10 #1 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 ©2004 Fairchild Semiconductor Corporation (Continued) TO-220F ø3.18 0.20 0.10 (1.00x45 ) 2.54TYP [2.54 ] 0.20 0.20 2.54 0.20 (0.70) +0.10 0.50 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, March 2004 ...

Page 10

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet series™ ® ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FPS™ CROSSVOLT™ ...

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