FQA8N90C_F109 Fairchild Semiconductor, FQA8N90C_F109 Datasheet

FQA8N90C_F109

Manufacturer Part Number

FQA8N90C_F109

Description

MOSFET N-CH 900V 8A TO-3P

Manufacturer

Fairchild Semiconductor

Series

QFET™r

Datasheet

1.FQA8N90C_F109.pdf (8 pages)

Specifications of FQA8N90C_F109

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

1.9 Ohm @ 4A, 10V

Drain To Source Voltage (vdss)

900V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

5V @ 250µA

Gate Charge (qg) @ Vgs

45nC @ 10V

Input Capacitance (ciss) @ Vds

2080pF @ 25V

Power - Max

240W

Mounting Type

Through Hole

Package / Case

TO-3PN-3

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

1.9 Ohms

Drain-source Breakdown Voltage

900 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

8 A

Power Dissipation

240 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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This is to inform you that a design and/or process change will be made to the following

product(s). This notification is for your information and concurrence.

If you require data or samples to qualify this change, please contact Fairchild Semiconductor

within 30 days of receipt of this notification.

Updated process quality documentation, such as FMEAs and Control Plans, are available for

viewing upon request.

If you have any questions concerning this change, please contact:

PCN Originator:

Name: LEE, JEONGSOO

E-mail: JEONGSOO.LEE@fairchildsemi.com

Phone: 82-32-680-1311

Implementation of change:

Expected 1st Device Shipment Date: 2007/08/26

Earliest Year/Work Week of Changed Product: H35

Change Type Description: Passivation Material, Fab Process Change

Description of Change (From): There are no passivation layer.

Description of Change (To): Adding Passivation layer on front metal.

Reason for Change : To improve product quality.

Qual/REL Plan Numbers : Q20070212

All items were passed.

Qualification :

All items were passed.

Results/Discussion

Test: (Autoclave)

Lot

Q20070212AAACLV

Q20070212ABACLV

Q20070212ACACLV

Test: (High Temperature Gate Bias)

Lot

Q20070212AAHTGB

Q20070212ABHTGB

DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL

Technical Contact:

Name: LEE, JEONGSOO

E-mail: JEONGSOO.LEE@fairchildsemi.com

Phone: 82-32-680-1311

Device

FQPF6N90C

Device

FQPF6N90C

500-HOURS

0/77

96-HOURS

0/77

1000-HOURS

0/77

Date Issued On : 2007/06/26

Date Created : 2007/05/17

Failure Code

PCN# : Q2072004

Pg. 1

Related parts for FQA8N90C_F109

FQA8N90C_F109 Summary of contents

Page 1

... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...

Page 2

... Device Q20070212AATMCL1 FQPF6N90C Q20070212AATMCL1 FQPF6N90C Q20070212ABTMCL1 FQPF6N90C Q20070212ABTMCL1 FQPF6N90C Q20070212ACTMCL1 FQPF6N90C Q20070212ACTMCL1 FQPF6N90C Product Id Description : There are some QFET products. Affected FSIDs : FQA10N80C_F109 FQA7N80C_F109 FQA8N90C_F109 FQAF11N90C FQB6N60CTM_WS FQB8N60CTM_WS FQD5N60CTM_NL FQD6N60CTF_WS FQI5N60CTU FQP3N80C FQP5N60C FQP6N60C FQP7N80C FQP8N60C_F080 FQP8N80C_NL FQPF3N80C FQPF4N90CT FQPF5N60C_F105 FQPF6N80CT ...

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