fqa8n90c-f109 Fairchild Semiconductor, fqa8n90c-f109 Datasheet
fqa8n90c-f109
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fqa8n90c-f109 Summary of contents
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... Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FQA8N90C_F109 Rev. A Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...
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... ≤ 8.0A, di/dt ≤200A/µs, V ≤ Starting DSS, 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ Essentially independent of operating temperature FQA8N90C_F109 Rev. A Package Reel Size TO-3PN -- T = 25°C unless otherwise noted C Test Conditions = 250 µ 250 µ ...
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... Figure 5. Capacitance Characteristics 3000 2500 C 2000 iss 1500 C oss 1000 C 500 rss Drain-Source Voltage [V] DS FQA8N90C_F109 Rev. A Figure 2. Transfer Characteristics ※ Notes : 1. 250µs Pulse Test ℃ Figure 4. Body Diode Forward Voltage 10V ...
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... V , Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FQA8N90C_F109 Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 ※ Notes : 250 µA 0.5 D 0.0 100 150 200 ...
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... Unclamped Inductive Switching Test Circuit & Waveforms FQA8N90C_F109 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...
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... FQA8N90C_F109 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms 6 www.fairchildsemi.com ...
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... Mechanical Dimensions FQA8N90C_F109 Rev. A TO-3PN 7 Dimensions in Millimeters www.fairchildsemi.com ...
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... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FQA8N90C_F109 Rev. A Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ PowerTrench i-Lo™ IntelliMAX™ Programmable Active Droop™ ...