BUK9240-100A/C1,11 NXP Semiconductors, BUK9240-100A/C1,11 Datasheet
BUK9240-100A/C1,11
Specifications of BUK9240-100A/C1,11
Related parts for BUK9240-100A/C1,11
BUK9240-100A/C1,11 Summary of contents
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... BUK9240-100A TrenchMOS™ logic level FET Rev. 01 — 03 October 2000 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ Product availability: BUK9240-100A in SOT428 (D-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 C rated Logic level compatible. 3. Applications Automotive and general purpose power switching: ...
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... Figure 2 and 100 Figure pulsed Figure Figure pulsed unclamped inductive load 100 starting Rev. 01 — 03 October 2000 BUK9240-100A TrenchMOS™ logic level FET Typ Max Unit 100 114 W 175 44.6 Min Max Unit 100 V 100 23.8 A [1] 135 A 114 W 55 +175 C ...
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... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage. 9397 750 07573 Product specification 03aa16 125 150 175 200 der Fig 2. Normalized continuous drain current as a function of mounting base temperature D. Rev. 01 — 03 October 2000 BUK9240-100A TrenchMOS™ logic level FET 03aa24 120 I der (%) 100 100 125 150 175 4 ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of 9397 750 07573 Product specification Conditions Figure th(j-mb) (K/W) 1 0.1 0.01 0.001 pulse duration. Rev. 01 — 03 October 2000 BUK9240-100A TrenchMOS™ logic level FET Value Unit 71.4 K/W 1.3 K/W 03na70 ...
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... MHz; Figure 1 measured from drain lead from package to centre of die measured from source lead from package to source bond pad Rev. 01 — 03 October 2000 BUK9240-100A TrenchMOS™ logic level FET Typ Max Unit 2 500 A 2 100 100 m 44 ...
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... Fig 6. On-state resistance: typical values. 03na67 3.0 (V) 3.2 3 Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 03 October 2000 BUK9240-100A TrenchMOS™ logic level FET Min Typ Max 0.85 1.2 60 240 03na64 ( 03aa29 3 2 ...
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... C (pF) 5000 4000 3000 2000 1000 ( MHz GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 03 October 2000 BUK9240-100A TrenchMOS™ logic level FET 03aa36 min typ max 0.5 1 1 (V) ...
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... Fig 14. Turn-on gate charge characteristics; typical values. 120 IS (A) 100 175 0.0 0.2 0.4 0.6 0.8 1.0 1 Rev. 01 — 03 October 2000 BUK9240-100A TrenchMOS™ logic level FET 03na63 ( 14( 80( (nC 03na62 1.6 1.8 © Philips Electronics N.V. 2000. All rights reserved. 60 ...
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... REFERENCES JEDEC EIAJ TO-252 SC-63 Rev. 01 — 03 October 2000 BUK9240-100A TrenchMOS™ logic level FET max. min. 0.7 10.4 2.95 0.5 0.2 0.5 9.6 2.55 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20001003 - Product specification; initial version. 9397 750 07573 Product specification Rev. 01 — 03 October 2000 BUK9240-100A TrenchMOS™ logic level FET © Philips Electronics N.V. 2000. All rights reserved ...
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... Rev. 01 — 03 October 2000 BUK9240-100A TrenchMOS™ logic level FET Philips Semiconductors assumes no © ...
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... United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA70) Rev. 01 — 03 October 2000 BUK9240-100A TrenchMOS™ logic level FET © Philips Electronics N.V. 2000. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 03 October 2000 Document order number: 9397 750 07573 Printed in The Netherlands BUK9240-100A TrenchMOS™ logic level FET ...