BUK9240-100A NXP Semiconductors, BUK9240-100A Datasheet

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9240-100A

Manufacturer Part Number
BUK9240-100A
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Type
Power MOSFETr
Datasheet

Specifications of BUK9240-100A

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0386Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±10V
Continuous Drain Current
33A
Power Dissipation
114W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK9240-100A
Manufacturer:
NXP
Quantity:
60 000
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
Low conduction losses due to low
on-state resistance
Q101 compliant
12 V and 24 V loads
Automotive and general purpose
power switching
BUK9240-100A
N-channel TrenchMOS logic level FET
Rev. 02 — 15 June 2010
Quick reference data
Parameter
drain-source
voltage
drain current
total power
dissipation
drain-source
on-state
resistance
non-repetitive
drain-source
avalanche energy
Conditions
T
V
see
T
V
T
V
T
V
T
see
I
R
T
D
j
mb
j
j
j
j(init)
GS
GS
GS
GS
GS
≥ 25 °C; T
= 25 °C
= 25 °C
= 25 °C;
= 25 A; V
Figure
Figure
= 25 °C; see
= 5 V; T
= 10 V; I
= 4.5 V; I
= 5 V; I
= 50 Ω; V
= 25 °C; unclamped
1; see
12; see
D
sup
mb
j
D
≤ 175 °C
= 25 A;
D
GS
= 25 A;
≤ 100 V;
= 25 °C;
= 25 A;
= 5 V;
Figure 2
Figure 3
Figure 13
Suitable for logic level gate drive
sources
Suitable for thermally demanding
environments due to 175 °C rating
Motors, lamps and solenoids
Min
-
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
33
-
34
-
Max Unit
100
33
114
38.6 mΩ
44.6 mΩ
40
31
V
A
W
mΩ
mJ

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BUK9240-100A Summary of contents

Page 1

... BUK9240-100A N-channel TrenchMOS logic level FET Rev. 02 — 15 June 2010 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... SOT428 (DPAK) Description plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK9240-100A N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT428 © NXP B.V. 2010. All rights reserved. ...

Page 3

... Figure 2 mb ≤ 50 µs pulsed °C mb ≤ 10 µs; pulsed ° ≤ 100 Ω sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK9240-100A N-channel TrenchMOS logic level FET Min Typ Max - - 100 - - 100 - 23.8 [ 135 - - ...

Page 4

... T (°C) mb Fig DSon δ D. All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK9240-100A N-channel TrenchMOS logic level FET 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature 03na69 = 10 μ 100 μ 100 ms ...

Page 5

... Transient thermal impedance from junction to ambient as a function of pulse duration BUK9240-100A Product data sheet Conditions see Figure 4 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK9240-100A N-channel TrenchMOS logic level FET Min Typ - - - 71.4 03na70 t p δ ...

Page 6

... ° ° see Figure /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK9240-100A N-channel TrenchMOS logic level FET Min Typ Max 100 - - 2.3 1 1 500 - 0. ...

Page 7

... Product data sheet 03na66 = 10 (V) R 3.0 2 (V) DS Fig 6. 03aa36 max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK9240-100A N-channel TrenchMOS logic level FET 34 DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage; typical values ( ...

Page 8

... Fig 10. Gate-source voltage as a function of gate 03aa33 50 R DSon (mΩ 120 180 ( ° Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK9240-100A N-channel TrenchMOS logic level FET ( ( charge; typical values V = 3.0 (V) ...

Page 9

... Fig 14. Input, output and reverse transfer capacitances 100 175 ° 0.5 1.0 All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK9240-100A N-channel TrenchMOS logic level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical values 03na62 = 25 °C 1.5 2 ...

Page 10

... REFERENCES JEDEC JEITA SC-63 TO-252 All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK9240-100A N-channel TrenchMOS logic level FET min 10.4 2.95 2.285 4.57 0.5 9 ...

Page 11

... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9240-100A v.2 20100615 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...

Page 12

... All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK9240-100A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 13

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 15 June 2010 BUK9240-100A N-channel TrenchMOS logic level FET © NXP B.V. 2010. All rights reserved ...

Page 14

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 15 June 2010 Document identifier: BUK9240-100A ...

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