BUK9240-100A NXP Semiconductors, BUK9240-100A Datasheet - Page 2

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9240-100A

Manufacturer Part Number
BUK9240-100A
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Type
Power MOSFETr
Datasheet

Specifications of BUK9240-100A

Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.0386Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±10V
Continuous Drain Current
33A
Power Dissipation
114W
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK9240-100A
Manufacturer:
NXP
Quantity:
60 000
NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9240-100A
Product data sheet
Pin
1
2
3
mb
Type number
BUK9240-100A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to
drain
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 15 June 2010
Simplified outline
SOT428 (DPAK)
1
mb
2
3
N-channel TrenchMOS logic level FET
Graphic symbol
BUK9240-100A
mbb076
G
© NXP B.V. 2010. All rights reserved.
D
S
Version
SOT428
2 of 14

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