BUK9240-100A NXP Semiconductors, BUK9240-100A Datasheet - Page 7

• Manufacturer Part Number: BUK9240-100A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK9240-100A

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0386Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±10V
• Continuous Drain Current: 33A
• Power Dissipation: 114W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BUK9240-100A
Product data sheet
Fig 5.
Fig 7.
(A)
(A)
I
10
I
10
10
10
10
10
D
D
120
100
80
60
40
20
-1
-2
-3
-4
-5
-6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
4.0
1
5.0
min
4
V
GS
typ
= 10 (V)
6
2
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
03aa36
V
3.0
2.4
DS
(V)
03na66
(V)
10
3
Rev. 02 — 15 June 2010
Fig 6.
Fig 8.
R
(mΩ)
DSon
(S)
g
fs
34
32
30
28
26
24
80
60
40
20
0
of gate-source voltage; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
0
0
N-channel TrenchMOS logic level FET
10
5
BUK9240-100A
20
10
30
V
© NXP B.V. 2010. All rights reserved.
GS
I
D
(V)
(A)
03na64
03na65
15
40
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