BUK9240-100A NXP Semiconductors, BUK9240-100A Datasheet - Page 9

• Manufacturer Part Number: BUK9240-100A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK9240-100A

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0386Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±10V
• Continuous Drain Current: 33A
• Power Dissipation: 114W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
BUK9240-100A
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Source current as a function of source-drain voltage; typical values
a
3
2
1
0
-60
factor as a function of junction temperature
0
60
(A)
I
S
100
80
60
40
20
120
0
0
All information provided in this document is subject to legal disclaimers.
T
j
( ° C)
03aa29
T
j
= 175 °C
180
0.5
Rev. 02 — 15 June 2010
1.0
Fig 14. Input, output and reverse transfer capacitances
(pF)
T
6000
C
5000
4000
3000
2000
1000
j
= 25 °C
1.5
0
10
as a function of drain-source voltage; typical
values
−2
V
SD
03na62
(V)
N-channel TrenchMOS logic level FET
C
C
C
2.0
rss
iss
oss
10
−1
BUK9240-100A
1
10
© NXP B.V. 2010. All rights reserved.
V
DS
03na68
(V)
10
2
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