BUK9240-100A NXP Semiconductors, BUK9240-100A Datasheet - Page 3

• Manufacturer Part Number: BUK9240-100A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of BUK9240-100A

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.0386Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±10V
• Continuous Drain Current: 33A
• Power Dissipation: 114W
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BUK9240-100A
Product data sheet
Symbol
V
V
V
I
I
P
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
GSM
DS(AL)S
Peak drain current is limited by chip, not package.
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source
voltage
source current
peak source current
non-repetitive
drain-source
avalanche energy
Conditions
T
R
T
see
T
T
see
T
pulsed; t
T
t
I
V
All information provided in this document is subject to legal disclaimers.
p
D
j
mb
mb
mb
mb
mb
GS
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 25 A; V
Figure 3
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C
= 5 V; T
= 20 kΩ
p
Rev. 02 — 15 June 2010
≤ 50 µs
sup
j(init)
j
≤ 175 °C
p
GS
≤ 100 V; R
≤ 10 µs; pulsed;
GS
= 25 °C; unclamped
Figure 2
= 5 V; see
= 5 V; see
mb
= 25 °C
GS
Figure
= 50 Ω;
Figure 1
1;
N-channel TrenchMOS logic level FET
[1]
BUK9240-100A
Min
-
-
-10
-
-
-
-
-55
-55
-15
-
-
-
Typ
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2010. All rights reserved.
175
Max
100
100
10
33
23.8
135
114
175
15
33
135
31
Unit
V
V
V
A
A
A
W
°C
°C
V
A
A
mJ
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