BUK9240-100A/C1,11 NXP Semiconductors, BUK9240-100A/C1,11 Datasheet - Page 2
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BUK9240-100A/C1,11
Manufacturer Part Number
BUK9240-100A/C1,11
Description
MOSFET N-CH 100V SOT428
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9240-100AC111.pdf
(13 pages)
Specifications of BUK9240-100A/C1,11
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
38.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
3072pF @ 25V
Power - Max
114W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
Gate Charge (qg) @ Vgs
-
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Philips Semiconductors
9397 750 07573
Product specification
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
W
D
D
DM
DR
DRM
j
GSM
stg
j
DS
tot
DS
DGR
GS
tot
DSon
DSS
I
DM
is limited by chip, not package.
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
non-repetitive gate-source voltage
drain current (DC)
peak drain current
total power dissipation
storage temperature
operating junction temperature
reverse drain current (DC)
pulsed reverse drain current
non-repetitive avalanche energy
Quick reference data
Limiting values
Rev. 01 — 03 October 2000
Conditions
T
T
V
V
Conditions
t
T
Figure 2
T
T
Figure 3
T
T
T
unclamped inductive load; I
V
starting T
R
p
mb
mb
GS
GS
mb
mb
mb
mb
mb
mb
DS
GS
50 s
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 5 V; I
= 4.5 V; I
= 20 k
100 V; V
and
j
= 25 C
D
3
Figure 1
= 25 A
D
GS
GS
GS
= 25 A
GS
= 5 V
= 5 V;
= 5 V; R
= 5 V;
p
p
10 s
10 s;
Figure 2
GS
D
= 25 A;
= 50 ;
BUK9240-100A
TrenchMOS™ logic level FET
[1]
Typ
34
Min
55
55
© Philips Electronics N.V. 2000. All rights reserved.
Max
100
33
114
175
40
44.6
Max
100
100
33
23.8
135
114
+175
+175
33
135
31
10
15
Unit
V
A
W
m
m
Unit
V
V
V
V
A
A
A
W
A
A
mJ
C
C
C
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