BUK9240-100A/C1,11 NXP Semiconductors, BUK9240-100A/C1,11 Datasheet - Page 7
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BUK9240-100A/C1,11
Manufacturer Part Number
BUK9240-100A/C1,11
Description
MOSFET N-CH 100V SOT428
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9240-100AC111.pdf
(13 pages)
Specifications of BUK9240-100A/C1,11
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
38.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
3072pF @ 25V
Power - Max
114W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
Gate Charge (qg) @ Vgs
-
Philips Semiconductors
9397 750 07573
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C; V
= 1 mA; V
junction temperature.
drain current; typical values.
V GS(th)
g fs
(S)
(V)
70
60
50
40
30
20
10
0
2.5
1.5
0.5
2
1
0
0
-60
DS
DS
= V
= 25 V
-20
GS
10
20
max
min
typ
20
60
100
30
140
I D (A)
T j ( o C)
03na65
03aa33
40
180
Rev. 01 — 03 October 2000
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
C (pF)
gate-source voltage.
as a function of drain-source voltage; typical
values.
4000
5000
3000
2000
1000
6000
= 0 V; f = 1 MHz
(A)
I D
0
0.01
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
0
DS
= V
0.5
0.1
GS
BUK9240-100A
TrenchMOS™ logic level FET
1
min
1
1.5
© Philips Electronics N.V. 2000. All rights reserved.
typ
10
2
max
V DS (V)
V GS (V)
2.5
03na68
03aa36
100
Ciss
Coss
Crss
3
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