BUK9240-100A/C1,11 NXP Semiconductors, BUK9240-100A/C1,11 Datasheet - Page 8
![no-image](/images/manufacturer_photos/0/4/487/nxp_semiconductors_sml.jpg)
BUK9240-100A/C1,11
Manufacturer Part Number
BUK9240-100A/C1,11
Description
MOSFET N-CH 100V SOT428
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.BUK9240-100AC111.pdf
(13 pages)
Specifications of BUK9240-100A/C1,11
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
38.6 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
33A
Vgs(th) (max) @ Id
2V @ 1mA
Input Capacitance (ciss) @ Vds
3072pF @ 25V
Power - Max
114W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free by exemption / RoHS compliant by exemption
Gate Charge (qg) @ Vgs
-
Philips Semiconductors
9397 750 07573
Product specification
Fig 13. Transfer characteristics; typical values.
V
DS
= 25 V
I D
(A)
80
70
60
50
40
30
20
10
0
0
1
2
T j = 25 o C
Fig 15. Reverse diode current; typical values.
3
V
GS
= 0 V
T j = 175 o C
120
100
IS
(A)
4
80
60
40
20
0
V GS (V)
0.0
03na61
0.2
5
Rev. 01 — 03 October 2000
0.4
0.6
0.8
T j = 175 o C
1.0
Fig 14. Turn-on gate charge characteristics; typical
1.2
T
j
= 25 C; I
T j = 25 o C
1.4
values.
V SD (V)
V GS
(V)
1.6
03na62
6
5
4
3
2
1
0
0
1.8
D
= 25 A
20
BUK9240-100A
V DS = 14(V)
TrenchMOS™ logic level FET
© Philips Electronics N.V. 2000. All rights reserved.
40
V DS = 80(V)
Q G (nC)
03na63
60
8 of 13