PHB47NQ10T,118 NXP Semiconductors, PHB47NQ10T,118 Datasheet - Page 10

• Manufacturer Part Number: PHB47NQ10T,118
• Description: MOSFET N-CH 100V 47A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHB47NQ10T,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 166W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 166000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056745118::PHB47NQ10T /T3::PHB47NQ10T /T3

NXP Semiconductors
8. Revision history
Table 7.
PHB47NQ10T_2
Product data sheet
Document ID
PHB47NQ10T_2
Modifications:
PHP_PHB_47NQ10T-01
(9397 750 08243)
Revision history
Release date
20100225
20010516
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data
Rev. 02 — 25 February 2010
Change notice
-
-
N-channel TrenchMOS standard level FET
PHB47NQ10T
Supersedes
PHP_PHB_47NQ10T-01
-
© NXP B.V. 2010. All rights reserved.
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