PHB47NQ10T,118 NXP Semiconductors, PHB47NQ10T,118 Datasheet - Page 7

• Manufacturer Part Number: PHB47NQ10T,118
• Description: MOSFET N-CH 100V 47A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHB47NQ10T,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 166W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 166000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056745118::PHB47NQ10T /T3::PHB47NQ10T /T3

NXP Semiconductors
PHB47NQ10T_2
Product data sheet
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
a
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
4.5
3.5
2.5
1.5
0.5
0
4
3
2
1
0
−60
−60
junction temperature
factor as a function of junction temperature
-20
−20
20
20
60
60
max
typ
min
100
100
T
j
(°C)
All information provided in this document is subject to legal disclaimers.
140
140
003aaa023
003aaa103
T
j
(°C)
Rev. 02 — 25 February 2010
180
180
Fig 11. Drain-source on-state resistance as a function
Fig 13. Gate-source voltage as a function of gate
R
(mΩ)
DSon
V
(V)
GS
10
65
60
55
50
45
40
35
30
15
25
20
8
6
4
2
0
of drain current; typical values
charge; typical values
5
0
N-channel TrenchMOS standard level FET
V
GS
10
= 5.5 V
25
20
45
V
DD
30
= 20 V
PHB47NQ10T
65
6.0 V
40
V
85
DD
50
6.5 V
= 80 V
© NXP B.V. 2010. All rights reserved.
105
003aaa102
60
003aaa107
Q
I
D
G
10 V
7.0 V
7.5 V
8.0 V
(A)
(nC)
125
70
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