PHB47NQ10T,118 NXP Semiconductors, PHB47NQ10T,118 Datasheet - Page 6

• Manufacturer Part Number: PHB47NQ10T,118
• Description: MOSFET N-CH 100V 47A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHB47NQ10T,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 166W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 166000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056745118::PHB47NQ10T /T3::PHB47NQ10T /T3

NXP Semiconductors
PHB47NQ10T_2
Product data sheet
Fig 6.
Fig 8.
(A)
(A)
I
I
D
D
10
10
10
10
10
10
180
160
140
120
100
80
60
40
20
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
1
2
V
GS
2%
= 10 V
4
2
typ
3
6
8.0 V
98%
All information provided in this document is subject to legal disclaimers.
4
8
V
003aaa078
V
003aaa100
DS
GS
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
4.5 V
7.5 V
20 V
(V)
(V)
Rev. 02 — 25 February 2010
10
5
Fig 7.
Fig 9.
(S)
(A)
g
I
D
fs
100
45
40
35
30
25
20
15
10
80
60
40
20
5
0
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
0
N-channel TrenchMOS standard level FET
20
2
T
j
40
= 175 °C
PHB47NQ10T
4
60
25 °C
6
© NXP B.V. 2010. All rights reserved.
80
V
GS
003aaa104
003aaa101
I
D
(V)
(A)
100
8
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