PHB47NQ10T,118 NXP Semiconductors, PHB47NQ10T,118 Datasheet - Page 5

• Manufacturer Part Number: PHB47NQ10T,118
• Description: MOSFET N-CH 100V 47A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PHB47NQ10T,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 166W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 47A
• Drain To Source Voltage (vdss): 100V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 166000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056745118::PHB47NQ10T /T3::PHB47NQ10T /T3

NXP Semiconductors
6. Characteristics
Table 6.
PHB47NQ10T_2
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
r
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
reverse recovery time
recovered charge
Conditions
I
I
see
I
see
V
V
V
V
V
see
V
see
I
T
V
T
V
R
I
see
I
V
D
D
D
D
S
S
j
j
DS
DS
GS
GS
GS
GS
DS
DS
DS
G(ext)
= 25 °C; see
= 25 °C; see
= 250 µA; V
= 1 mA; V
= 1 mA; V
= 40 A; V
= 25 A; V
= 47 A; dI
Figure 10
Figure 10
Figure 11
Figure 11
Figure 15
All information provided in this document is subject to legal disclaimers.
= 100 V; V
= 100 V; V
= 25 V; V
= 30 V; R
= 30 V; T
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 10 Ω; T
Rev. 02 — 25 February 2010
GS
DS
S
DS
DS
D
D
/dt = -100 A/µs; V
j
DS
GS
L
and
and
GS
DS
= 25 °C
= 25 A; T
= 25 A; T
= 80 V; V
= 0 V; T
GS
GS
= V
= V
= 1.2 Ω; V
Figure 13
Figure 14
j
= 0 V; T
= 0 V; f = 1 MHz;
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; T
12
12
GS
GS
; T
; T
j
= 25 °C;
j
j
j
j
GS
j
= 175 °C;
= 25 °C;
= 175 °C;
= 25 °C;
j
j
GS
= 25 °C
j
j
= 25 °C
= 25 °C
= 25 °C
= 175 °C
= 10 V;
= 10 V;
GS
= -10 V;
N-channel TrenchMOS standard level FET
Min
100
1
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PHB47NQ10T
Typ
-
-
3
0.05
-
2
2
-
20
66
12
21
2320
315
187
15
45
0.85
66
70
83
0.24
© NXP B.V. 2010. All rights reserved.
Max
-
-
4
10
500
100
100
76
28
-
-
-
3100
378
256
23
105
116
63
1.2
-
-
µA
nC
nC
pF
pF
ns
Unit
V
V
V
µA
nA
nA
mΩ
mΩ
nC
pF
ns
ns
ns
V
ns
µC
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