PSMN035-150P,127 NXP Semiconductors, PSMN035-150P,127 Datasheet - Page 11

MOSFET N-CH 150V 50A SOT78

PSMN035-150P,127

Manufacturer Part Number
PSMN035-150P,127
Description
MOSFET N-CH 150V 50A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet

Specifications of PSMN035-150P,127

Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
250W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
79nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
50A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
30 mOhms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
50 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055716127::PSMN035-150P::PSMN035-150P
10. Revision history
Table 6:
Philips Semiconductors
9397 750 07994
Product specification
Rev Date
04
03
02
01
20010222
19990801
19990801
19990201
Revision history
CPCN
-
-
-
-
Description
Product specification; fourth version; supersedes third version
PSMN035-150_SERIES_HG_3 of 1 August 1999
Product specification; third version; supersedes second version
PSMN035-150_SERIES_2 of 1 August 1999
Product specification; second version; supersedes initial version
PSMN035-150_SERIES_1 of 1 February 1999
Product specification; initial version
Maximum value of Q
Lotus Manuscript version; August 1999 Rev 1.000
Front and back page (including address information) added.
Lotus Manuscript version; August 1999 Rev 1.000.
Lotus Manuscript version.
PSMN035-150B; PSMN035-150P
Rev. 04 — 22 February 2001
gd
added in
N-channel enhancement mode field-effect transistor
“Dynamic characteristics” on page
© Philips Electronics N.V. 2001. All rights reserved.
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