PSMN035-150P,127 NXP Semiconductors, PSMN035-150P,127 Datasheet - Page 9

• Manufacturer Part Number: PSMN035-150P,127
• Description: MOSFET N-CH 150V 50A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN035-150P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 79nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055716127::PSMN035-150P::PSMN035-150P

9. Package outline
Fig 16. SOT78
Philips Semiconductors
9397 750 07994
Product specification
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
DIMENSIONS (mm are the original dimensions)
Note
1. Terminals in this zone are not tinned.
UNIT
mm
OUTLINE
VERSION
SOT78
4.5
4.1
A
1.39
1.27
A 1
0.9
0.7
b
IEC
D
L
b 1
1.3
1.0
L 1
D 1
(1)
b 1
0.7
0.4
3-lead TO-220AB
c
JEDEC
15.8
15.2
1
e
D
E
p
REFERENCES
PSMN035-150B; PSMN035-150P
2
Rev. 04 — 22 February 2001
e
D 1
6.4
5.9
0
3
b
10.3
9.7
E
L 2
SC-46
q
scale
EIAJ
5
N-channel enhancement mode field-effect transistor
2.54
e
10 mm
15.0
13.5
L
mounting
base
L 1
3.30
2.79
(1)
max.
Q
3.0
L 2
A
A 1
PROJECTION
3.8
3.6
c
EUROPEAN
p
3.0
2.7
© Philips Electronics N.V. 2001. All rights reserved.
q
2.6
2.2
Q
ISSUE DATE
00-09-07
01-02-16
SOT78
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