PSMN035-150P,127 NXP Semiconductors, PSMN035-150P,127 Datasheet - Page 6

• Manufacturer Part Number: PSMN035-150P,127
• Description: MOSFET N-CH 150V 50A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN035-150P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 79nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055716127::PSMN035-150P::PSMN035-150P

Philips Semiconductors
9397 750 07994
Product specification
Fig 6. Output characteristics: drain current as a
Fig 8. Drain-source on-state resistance as a function
T
T
j
j
= 25 C
= 25 C
R DSon
function of drain-source voltage; typical values.
of drain current; typical values.
( )
(A)
I D
0.14
0.12
0.10
0.08
0.06
0.04
0.02
50
40
30
20
10
0
0
0
0
4.4 V
4.6 V
0.4
5
4.8 V
10
0.8
5.0 V
V GS = 10 V
15
1.2
5.2 V
20
8 V
1.6
5.4 V
V DS (V)
V GS = 8 V
I D (A)
003aaa019
4.6 V
4.4 V
4.8 V
5.2 V
25
5.4 V
5 V
003aaa021
6.0 V
6 V
PSMN035-150B; PSMN035-150P
Rev. 04 — 22 February 2001
2
30
N-channel enhancement mode field-effect transistor
Fig 7. Transfer characteristics: drain current as a
Fig 9. Normalized drain-source on-state resistance
T
a
j
= 25 C and 175 C; V
=
function of gate-source voltage; typical values.
factor as a function of junction temperature.
--------------------------- -
R
(A)
I D
a
DSon 25 C
R
0.8
0.6
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
1.0
3.0
2.0
50
40
30
20
10
DSon
0
0
V DS > I D x R DSon
-40
1
2
0
3
175
DS
4
40
o
C
I
5
D
© Philips Electronics N.V. 2001. All rights reserved.
80
T j = 25
R
6
DSon
7
120
o
C
T j ( o C )
V GS (V)
8
003aaa020
003aaa022
160
9
10
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