PSMN035-150P,127 NXP Semiconductors, PSMN035-150P,127 Datasheet - Page 5

• Manufacturer Part Number: PSMN035-150P,127
• Description: MOSFET N-CH 150V 50A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN035-150P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 79nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055716127::PSMN035-150P::PSMN035-150P

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 07994
Product specification
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
rr
j
(BR)DSS
GS(th)
SD
DSon
g(tot)
gs
gd
iss
oss
rss
r
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
Conditions
I
Figure 10
V
V
V
I
V
V
f = 1 MHz;
V
V
I
Figure 14
I
dI
V
D
D
Figure 8
D
S
S
GS
DS
GS
GS
GS
DD
GS
GS
S
T
T
T
T
T
T
= 250 A; V
= 1 mA; V
= 50 A; V
= 25 A; V
= 20 A;
/dt = 100 A/ s;
j
j
j
j
j
j
= 0 V; V
= 25 C
= 175 C
= 0 V; V
= 25 C
= 175 C
= 10 V; I
= 25
= 175 C
= 10 V;
= 0 V; V
= 75 V; R
= 10 V; R
= 0 V; V
PSMN035-150B; PSMN035-150P
Rev. 04 — 22 February 2001
and
o
C
Figure 13
DS
GS
Figure 15
DS
DS
GS
DS
R
D
9
D
G
GS
= 30 V
= 25 A;
= 120 V;
= 0 V;
= V
= 150 V
= 10 V
= 25 V;
= 1.5 ;
= 5.6
= 0 V
N-channel enhancement mode field-effect transistor
GS
;
Min
150
2.0
1.0
Typ
3.0
0.05
2
30
79
17
33
4720
456
208
25
138
79
93
0.85
118
0.66
© Philips Electronics N.V. 2001. All rights reserved.
Max
4.0
10
500
100
35
98
45
1.2
Unit
V
V
V
nA
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
ns
nC
5 of 14
A
A