PSMN035-150P,127 NXP Semiconductors, PSMN035-150P,127 Datasheet - Page 8
![MOSFET N-CH 150V 50A SOT78](/photos/5/30/53046/568-to-220ab-3_sot78_sml.jpg)
PSMN035-150P,127
Manufacturer Part Number
PSMN035-150P,127
Description
MOSFET N-CH 150V 50A SOT78
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN035-150P127.pdf
(14 pages)
Specifications of PSMN035-150P,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
250W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
79nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
50A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
35 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
30 mOhms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
50 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055716127::PSMN035-150P::PSMN035-150P
Philips Semiconductors
9397 750 07994
Product specification
Fig 14. Source (diode forward) current as a function of
T
j
= 25 C and 175 C; V
source-drain (diode forward) voltage; typical
values.
(A)
I S
50
45
40
35
30
25
20
15
10
5
0
0
0.2
0.4
T j = 175 o C
GS
= 0 V
0.6
0.8
T j = 25 o C
1.0
V SD (V)
003aaa027
PSMN035-150B; PSMN035-150P
Rev. 04 — 22 February 2001
1.2
N-channel enhancement mode field-effect transistor
Fig 15. Gate-source voltage as a function of gate
I
D
= 50 A; V
charge; typical values.
V GS
(V)
10
8
6
4
2
0
0
DD
I D = 50 A
T j = 25 o C
= 30 V and 120 V
20
V DD = 30 V
40
© Philips Electronics N.V. 2001. All rights reserved.
V DD = 120 V
60
Q G (nC)
003aaa028
80
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