APT1204R7KFLLG Microsemi Power Products Group, APT1204R7KFLLG Datasheet - Page 2

• Manufacturer Part Number: APT1204R7KFLLG
• Description: MOSFET N-CH 1200V 3.5A TO-220
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT1204R7KFLLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.7 Ohm @ 1.75A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 715pF @ 25V
• Power - Max: 135W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
DYNAMIC CHARACTERISTICS
THERMAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
temperature
I
R
R
t
V
dv
C
t
C
Q
RRM
C
I
Q
Q
d(off)
E
E
d(on)
E
E
SM
t
Q
I
SD
θJC
θJA
S
rr
oss
t
t
/
rss
iss
on
off
on
off
gs
gd
rr
r
f
dt
g
0.80
0.60
0.40
0.20
1.0
0
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
S
S
S
10
= -I
= -I
= -I
-5
D
D
D
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
3.5A,
3.5A,
3.5A,
0.9
0.5
0.3
0.1
0.05
0.7
di
di
di
/
/
/
dt
dt
dt
= 100A/µs)
= 100A/µs)
= 100A/µs)
10
3
-4
dv
1
2
/
dt
(Body Diode)
(V
5
6
6
GS
= 0V, I
RECTANGULAR PULSE DURATION (SECONDS)
S
10
= -I
-3
SINGLE PULSE
D
3.5A)
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
V
RESISTIVE SWITCHING
V
DD
I
Test Conditions
DD
D
dv
device itself.
I
D
I
I
D
D
= 3.5A, R
/
= 800V, V
= 3.5A, R
= 800V, V
dt
= 3.5A @ 25°C
= 3.5A @ 25°C
V
V
V
V
V
R
V
f = 1 MHz
DD
DD
numbers reflect the limitations of the test circuit rather than the
DS
GS
GS
T
T
T
T
T
T
G
GS
j
j
j
j
j
j
= 1.6Ω
10
= 600V
= 600V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25V
= 15V
= 10V
= 0V
j
-2
G
= +25°C, L = 69.39mH, R
G
GS
GS
= 4.3Ω
= 5Ω
I
= 15V
S
= 15V
≤
-
I
D
3.5A
Note:
di
Peak T J = P DM x Z θJC + T C
/
MIN
MIN
dt
MIN
Duty Factor D =
10
≤ 700A/µs
-1
t 1
G
t 2
= 25Ω, Peak I
11.5
TYP
TYP
715
130
115
135
TYP
0.5
1.1
8.3
36
31
21
20
24
23
25
4
7
2
t 1
V
/ t 2
R
≤ 1200
APT1204R7KFLL
MAX
MAX
MAX
250
515
0.90
3.5
1.3
14
18
40
L
1.0
= 3.5A
T
J
≤ 150
Amps
Amps
UNIT
Volts
V/ns
UNIT
°C/W
UNIT
µC
ns
nC
pF
ns
µ
°
J
C