APT5018BLLG Microsemi Power Products Group, APT5018BLLG Datasheet - Page 2

• Manufacturer Part Number: APT5018BLLG
• Description: MOSFET N-CH 500V 27A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT5018BLLG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 180 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 58nC @ 10V
• Input Capacitance (ciss) @ Vds: 2596pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
APT Reserves the right to change, without notice, the specifications and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
Symbol
Symbol
Symbol
t
R
R
C
t
C
C
dv
temperature
V
Q
Q
Q
d(on)
d(off)
E
E
E
E
I
Q
t
SM
I
oss
t
t
SD
rss
S
iss
on
off
on
off
rr
/
gs
gd
r
f
JC
JA
g
rr
dt
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Peak Diode Recovery
Characteristic
Junction to Case
Junction to Ambient
10
-5
0.05
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.9
0.7
0.5
0.3
0.1
3
10
-4
dv
2
1
/
dt
(V
S
(Body Diode)
6
6
5
= -I
GS
S
SINGLE PULSE
= -I
= 0V, I
D
27A
RECTANGULAR PULSE DURATION (SECONDS)
D
27A
, dl
S
, dl
S
= -I
10
/dt = 100A/µs)
-3
S
D
/dt = 100A/µs)
27A
INDUCTIVE SWITCHING @ 125°C
INDUCTIVE SWITCHING @ 25°C
)
V
RESISTIVE SWITCHING
V
4 Starting T
5
6 Eon includes diode reverse recovery. See figures 18, 20.
Test Conditions
DD
DD
I
I
D
D
I
I
dv
device itself.
D
D
= 333V, V
= 27A, R
= 27A, R
= 333V V
V
V
/
= 27A @ 25°C
= 27A @ 25°C
V
V
V
dt
R
f = 1 MHz
V
DD
DD
DS
GS
GS
G
GS
numbers reflect the limitations of the test circuit rather than the
= 1.6
= 250V
= 250V
= 25V
= 10V
= 15V
= 0V
10
G
G
GS
j
-2
GS
= +25°C, L = 3.32mH, R
= 5
= 5
= 15V
= 15V
I
S
-
I
D
27A
Note:
Peak T J = P DM x Z JC + T C
di
/
MIN
MIN
MIN
Duty Factor D = t 1 / t
dt
10
-1
700A/µs
t 1
G
t 2
= 25 , Peak I
2596
TYP
TYP
546
216
134
337
162
544
TYP
38
58
15
31
18
9
4
2
8
V
APT5018BLL - SLL
2
R
V
DSS
MAX
MAX
MAX
0.42
100
1.3
40
27
L
1.0
8
= 27A
T
J
150
Amps
UNIT
UNIT
Volts
UNIT
°C/W
V/ns
nC
µC
pF
ns
µ
ns
°
J
C