APT30M85BVRG Microsemi Power Products Group, APT30M85BVRG Datasheet - Page 2

• Manufacturer Part Number: APT30M85BVRG
• Description: MOSFET N-CH 300V 40A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT30M85BVRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 195nC @ 10V
• Input Capacitance (ciss) @ Vds: 4950pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1
2
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
Symbol
Symbol
Symbol
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
R
R
C
C
V
C
Q
Q
Q
d(on)
d(off)
I
Q
t
I
SM
t
t
oss
SD
rss
S
iss
gs
gd
r
rr
f
JC
JA
g
rr
0.005
0.001
0.05
0.01
0.5
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time (I
Reverse Recovery Charge (I
Characteristic
Junction to Case
Junction to Ambient
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D=0.5
0.02
0.01
0.05
0.2
0.1
SINGLE PULSE
10
-4
3
1
2
(V
(Body Diode)
S
= -I
GS
S
= -I
= 0V, I
D[Cont.]
RECTANGULAR PULSE DURATION (SECONDS)
10
D[Cont.]
-3
, dl
S
= -I
, dl
S
/dt = 100A/ s)
D[Cont.]
S
/dt = 100A/ s)
10
I
I
)
D
D
3
4
Test Conditions
-2
V
V
= I
= I
See MIL-STD-750 Method 3471
Starting T
DD
DD
V
V
V
R
D[Cont.]
D[Cont.]
f = 1 MHz
V
DS
GS
GS
G
GS
= 0.5 V
= 0.5 V
= 1.6
= 25V
= 10V
= 15V
= 0V
j
@ 25 C
@ 25 C
= +25 C, L = 1.63mH, R
DSS
DSS
10
-1
Note:
Peak T J = P DM x Z JC + T C
MIN
MIN
MIN
Duty Factor D =
1.0
G
t 1
= 25 , Peak I
t 2
4100
TYP
TYP
390
TYP
700
200
130
25
55
12
10
43
6
7
t 1
/ t 2
APT30M85BVR
4950
MAX
0.42
MAX
MAX
980
300
195
160
L
1.3
40
37
77
24
20
65
14
40
= 40A
10
Amps
UNIT
UNIT
Volts
UNIT
C/W
pF
nC
ns
ns
C