APT5020BVFRG Microsemi Power Products Group, APT5020BVFRG Datasheet - Page 2

• Manufacturer Part Number: APT5020BVFRG
• Description: MOSFET N-CH 500V 26A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT5020BVFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 225nC @ 10V
• Input Capacitance (ciss) @ Vds: 4440pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1
2
Symbol
Symbol
Symbol
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
I
R
R
C
C
d
d
V
dv
C
Q
Q
RRM
I
Q
Q
(on)
(off)
t
SM
t
I
t
oss
SD
rss
iss
S
rr
gs
gd
/
r
f
JC
JA
g
rr
dt
0.005
0.001
0.05
0.01
0.5
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
S
S
S
-5
= -I
= -I
= -I
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D
D
D
D=0.5
[Cont.],
[Cont.],
[Cont.],
0.02
0.01
0.05
0.2
0.1
10
di
di
di
/
/
/
-4
dt
dt
dt
SINGLE PULSE
3
= 100A/ s)
= 100A/ s)
= 100A/ s)
dv
1
2
/
dt
(Body Diode)
(V
5
GS
RECTANGULAR PULSE DURATION (SECONDS)
= 0V, I
10
-3
S
= -I
D
[Cont.])
I
I
10
D
D
3
4
5
Test Conditions
= I
= I
-2
V
V
See MIL-STD-750 Method 3471
Starting T
I
V
DD
DD
S
D
D
R
V
V
V
R
f = 1 MHz
V
[Cont.] @ 25 C
[Cont.] @ 25 C
DS
GS
GS
= 200V.
G
GS
= 0.5 V
= 0.5 V
-I
T
T
T
T
T
T
D
= 1.8
j
j
j
j
j
j
= 25V
= 10V
= 15V
= 25 C
= 125 C
= 25 C
= 125 C
= 25 C
= 125 C
= 0V
[Cont.],
j
= +25 C, L = 3.85mH, R
DSS
DSS
10
di
-1
/
dt
= 100A/ s, V
Note:
Peak T J = P DM x Z JC + T C
MIN
MIN
MIN
Duty Factor D =
1.0
DD
t 1
G
= 25 , Peak I
t 2
V
3700
TYP
TYP
TYP
510
200
150
1.3
4.5
DSS
12
18
25
70
12
10
50
8
t 1
, T
/ t 2
j
150 C, R
APT5020BVFR
4440
MAX
MAX
MAX
0.42
104
250
500
715
300
225
105
1.3
L
26
37
25
20
75
15
40
5
= 26A
10
G
Amps
Amps
= 2.0 ,
UNIT
UNIT
Volts
V/ns
UNIT
nC
pF
C/W
ns
ns
C