APT30M85BVFRG Microsemi Power Products Group, APT30M85BVFRG Datasheet - Page 2

• Manufacturer Part Number: APT30M85BVFRG
• Description: MOSFET N-CH 300V 40A TO-247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT30M85BVFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 300V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 195nC @ 10V
• Input Capacitance (ciss) @ Vds: 4950pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
1
2
Symbol
Symbol
Symbol
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 S, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
I
R
R
C
C
d
d
dv
C
Q
V
Q
RRM
I
Q
Q
(on)
(off)
SM
t
I
t
t
oss
SD
iss
rss
S
rr
gd
/
gs
r
f
JC
rr
JA
g
dt
0.005
0.001
0.05
0.01
0.5
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
S
S
S
-5
= -I
= -I
= -I
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D
D
D
D=0.5
[Cont.],
[Cont.],
[Cont.],
0.02
0.01
0.05
0.2
0.1
SINGLE PULSE
10
di
di
di
/
/
/
dt
dt
dt
-4
3
= 100A/ s)
= 100A/ s)
= 100A/ s)
dv
1
2
/
dt
(Body Diode)
(V
5
GS
RECTANGULAR PULSE DURATION (SECONDS)
= 0V, I
10
-3
S
= -I
D
[Cont.])
I
I
D
D
10
3
4
5
Test Conditions
= I
= I
-2
V
V
See MIL-STD-750 Method 3471
Starting T
I
V
DD
DD
S
D
D
R
V
V
V
R
f = 1 MHz
V
[Cont.] @ 25 C
[Cont.] @ 25 C
GS
GS
= 200V.
DS
G
GS
= 0.5 V
= 0.5 V
-I
T
T
T
T
T
T
D
= 1.6
j
j
j
j
j
j
= 25V
= 10V
= 15V
= 25 C
= 125 C
= 25 C
= 125 C
= 25 C
= 125 C
= 0V
[Cont.],
j
= +25 C, L = 1.63mH, R
DSS
DSS
10
di
-1
/
dt
= 100A/ s, V
Note:
Peak T J = P DM x Z JC + T C
MIN
MIN
MIN
Duty Factor D =
DD
1.0
t 1
G
= 25 , Peak I
t 2
V
4100
TYP
TYP
700
200
130
TYP
0.8
3.8
DSS
25
55
12
10
43
10
23
7
t 1
, T
/ t 2
j
APT30M85BVFR
150 C, R
4950
MAX
MAX
MAX
0.42
160
200
400
980
300
195
1.3
L
40
37
77
24
20
35
14
40
5
= 40A
10
G
Amps
Amps
UNIT
= 2.0 ,
UNIT
Volts
V/ns
UNIT
nC
pF
C/W
ns
ns
C