APT12080LVFRG Microsemi Power Products Group, APT12080LVFRG Datasheet

MOSFET N-CH 1200V 16A TO-264

APT12080LVFRG

Manufacturer Part Number
APT12080LVFRG
Description
MOSFET N-CH 1200V 16A TO-264
Manufacturer
Microsemi Power Products Group
Series
POWER MOS V®r
Datasheet

Specifications of APT12080LVFRG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 8A, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
4V @ 2.5mA
Gate Charge (qg) @ Vgs
485nC @ 10V
Input Capacitance (ciss) @ Vds
7800pF @ 25V
Power - Max
520W
Mounting Type
Through Hole
Package / Case
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power MOS V
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
also achieves faster switching speeds through optimized gate layout.
• Faster Switching
• Lower Leakage
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
Symbol
Symbol
T
R
BV
V
V
V
J
I
I
V
E
DS(on)
E
GS(th)
I
,T
I
GSS
P
DSS
GSM
DSS
T
I
DM
AR
GS
AR
D
AS
DSS
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
®
is a new generation of high voltage N-Channel enhancement
POWER MOS V
1
(Repetitive and Non-Repetitive)
1
DS
C
APT Website - http://www.advancedpower.com
1
= V
C
= 25°C
• Avalanche Energy Rated
• Popular
= 25°C
4
GS
Package
GS
2
DS
DS
, I
= ±30V, V
GS
D
(V
= 1200, V
= 960V, V
= 0V, I
= 2.5mA)
GS
= 10V, I
T-MAX™
D
DS
= 250µA)
GS
GS
= 0V)
®
= 0V)
D
= 0V, T
= 8A)
or TO-264
All Ratings: T
C
FREDFET
= 125°C)
APT12080B2VFR
APT12080LVFR
1200V 16A 0.800
C
®
= 25°C unless otherwise specified.
APT12080B2VFR_LVFR
1200
MIN
2
T-MAX™
-55 to 150
1200
2500
4.16
TYP
±30
±40
520
300
16
64
16
50
0.800
1000
±100
MAX
250
4
TO-264
G
FREDFET
Ohms
Amps
Watts
Amps
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
mJ
°C
µA
nA
Ω Ω Ω Ω Ω
D
S

Related parts for APT12080LVFRG

APT12080LVFRG Summary of contents

Page 1

POWER MOS V Power MOS new generation of high voltage N-Channel enhancement ® mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching ...

Page 2

DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance iss C Output Capacitance oss C Reverse Transfer Capacitance rss Q 3 Total Gate Charge g Q Gate-Source Charge gs Q Gate-Drain ("Miller") Charge gd t (on) Turn-on Delay Time d t Rise ...

Page 3

V GS =5V, 6V, 7V, 10V & 15V 120 240 360 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS > (ON ...

Page 4

OPERATION HERE LIMITED (ON =+25° =+150°C SINGLE PULSE . 100 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 20 ...

Related keywords