APT12080LVFRG Microsemi Power Products Group, APT12080LVFRG Datasheet - Page 2

• Manufacturer Part Number: APT12080LVFRG
• Description: MOSFET N-CH 1200V 16A TO-264
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT12080LVFRG

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Gate Charge (qg) @ Vgs: 485nC @ 10V
• Input Capacitance (ciss) @ Vds: 7800pF @ 25V
• Power - Max: 520W
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
1
2
Symbol
Symbol
Symbol
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
t
t
I
R
R
C
d
d
C
V
dv
C
Q
Q
RRM
I
Q
Q
(on)
(off)
t
I
SM
t
t
θJC
θJA
oss
SD
rss
iss
S
rr
gs
gd
/
r
f
rr
g
dt
0.005
0.001
0.05
0.01
0.3
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
S
S
S
-5
= -I
= -I
= -I
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D
D
D
D=0.5
[Cont.],
[Cont.],
[Cont.],
0.02
0.01
0.05
0.2
0.1
10
di
di
di
/
/
/
-4
dt
dt
dt
3
= 100A/µs)
= 100A/µs)
= 100A/µs)
dv
SINGLE PULSE
1
2
/
dt
(Body Diode)
(V
5
GS
RECTANGULAR PULSE DURATION (SECONDS)
= 0V, I
10
-3
S
= -I
D
[Cont.])
I
I
D
D
10
3
4
5
Test Conditions
= I
= I
-2
V
V
See MIL-STD-750 Method 3471
Starting T
I
DD
DD
S
D
D
V
V
V
R
f = 1 MHz
V
≤
[Cont.] @ 25°C
[Cont.] @ 25°C
DS
GS
GS
G
GS
= 0.5 V
= 0.5 V
I
T
T
T
T
T
T
D
= 0.6Ω
j
j
j
j
j
j
= 25V
= 10V
= 15V
[Cont.],
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V
j
= +25°C, L = 19.53mH, R
DSS
DSS
10
di
/
-1
dt
= 100A/µs, T
Note:
Peak T J = P DM x Z θJC + T C
MIN
MIN
MIN
Duty Factor D =
j
1.0
≤
t 1
150°C, R
G
APT12080B2VFR_LVFR
= 25Ω, Peak I
t 2
6500
TYP
530
250
325
145
TYP
TYP
29
16
12
59
12
12
22
2
6
t 1
/ t
2
G
= 2.0Ω V
7800
MAX
MAX
740
375
485
215
MAX
0.24
350
700
45
32
24
90
24
1.3
16
64
18
40
L
10
= 16A
R
= 200V.
Amps
Amps
UNIT
UNIT
Volts
V/ns
UNIT
°C/W
nC
pF
µC
ns
ns