STB18NF25 STMicroelectronics, STB18NF25 Datasheet - Page 15

• Manufacturer Part Number: STB18NF25
• Description: MOSFET N-CH 250V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB18NF25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 29.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 250 V
• Continuous Drain Current: 17 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10296-2

STB18NF25, STD18NF25
6
Revision history
Table 9.
16-Nov-2009
19-Feb-2010
Date
Document revision history
Revision
1
2
Doc ID 16785 Rev 2
First release
V
DS
value in
Table 8
has been corrected.
Changes
Revision history
15/16