STB18NF25 STMicroelectronics, STB18NF25 Datasheet - Page 8

• Manufacturer Part Number: STB18NF25
• Description: MOSFET N-CH 250V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB18NF25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 29.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 250 V
• Continuous Drain Current: 17 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10296-2

Electrical characteristics
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Figure 14. Source-drain diode forward
(V)
V
0.7
0.6
0.5
0.8
0.4
1.0
0.9
SD
0
characteristics
T
J
=25°C
5
10
T
J
=-50°C
15
T
J
=175°C
20
I
SD
Doc ID 16785 Rev 2
AM05558v1
(A)
Figure 15. Normalized B
(norm)
BV
0.95
1.10
1.05
1.00
0.90
1.15
DSS
-100
-50
0
STB18NF25, STD18NF25
VDSS
50
vs temperature
100
150
AM05559v1
T
J
(°C)