STB18NF25 STMicroelectronics, STB18NF25 Datasheet - Page 4

• Manufacturer Part Number: STB18NF25
• Description: MOSFET N-CH 250V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB18NF25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 29.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 250 V
• Continuous Drain Current: 17 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10296-2

Electrical characteristics
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Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
V
Symbol
Symbol
R
V
CASE
(BR)DSS
C
g
C
I
I
DS(on)
C
GS(th)
C
C
Q
Q
DSS
GSS
R
fs
Q
o(er)
o(tr)
oss
rss
iss
gs
gd
G
g
(1)
=25 °C unless otherwise specified)
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent capacitance time
related
Equivalent capacitance
energy related
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
DS
On/off states
Dynamic
= 0)
Parameter
Parameter
GS
= 0)
Doc ID 16785 Rev 2
V
V
I
V
V
V
V
V
V
V
V
f=1 MHz gate DC bias=0 test
signal level=20 mV open
drain
D
GS
GS
GS
DS
DS
DS
DS
DS
DS
DD
= 1 mA, V
= V
= 10 V, I
= 200 V, I
= Max rating,
= Max rating,Tc=125 °C
= ±20 V
= 15 V, I
=25 V, f=1 MHz, V
= 0 to 200 V, V
=10 V (see
Test conditions
Test conditions
GS
, I
D
D
GS
D
= 8.5 A
D
= 250 µA
= 8.5 A
= 0
= 17 A
Figure
GS
=0
GS
17)
=0
STB18NF25, STD18NF25
Min.
Min.
250
2
-
-
-
-
-
-
1000
Typ.
Typ.
0.14
29.5
15.6
178
106
4.8
14
28
79
3
2
0.165
Max.
Max.
±
100
10
-
-
-
-
-
-
1
4
Unit
Unit
nC
nC
nC
pF
pF
pF
pF
pF
µA
µA
nA
Ω
Ω
S
V
V