STB18NF25 STMicroelectronics, STB18NF25 Datasheet - Page 6

• Manufacturer Part Number: STB18NF25
• Description: MOSFET N-CH 250V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB18NF25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 29.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 250 V
• Continuous Drain Current: 17 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10296-2

Electrical characteristics
2.1
6/16
Figure 2.
Figure 4.
Figure 6.
100
0.1
0.1
(A)
(A)
10
10
I
I
I
D
D
1
1
D
0.1
0.1
(A)
15
40
30
25
20
10
45
35
0
5
0
Electrical characteristics (curves)
Safe operating area for D²PAK
Safe operating area for DPAK
Output characteristics
V
GS
1
1
=10V
10
Tc=25°C
Tj=175°C
Tj=175°C, Tc=25°C
Sinlge
pulse
10
10
Single pulse
20
100
100
V
V
DS
DS
V
(V)
(V)
7V
DS
5V
6V
Doc ID 16785 Rev 2
100µs
100µs
10µs
1ms
10ms
10µs
1ms
10ms
AM05549v1
AM05561v1
(V)
AM05550v1
Figure 3.
Figure 5.
Figure 7.
(A)
20
10
30
I
D
0
0
Thermal impedance for D²PAK
Thermal impedance for DPAK
Transfer characteristics
2
V
DS
=10V
4
STB18NF25, STD18NF25
6
8
V
GS
AM05551v1
(V)