STB18NF25 STMicroelectronics, STB18NF25 Datasheet - Page 7

• Manufacturer Part Number: STB18NF25
• Description: MOSFET N-CH 250V 17A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB18NF25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 29.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 250 V
• Continuous Drain Current: 17 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10296-2

STB18NF25, STD18NF25
Figure 8.
Figure 10. Output capacitance stored energy
Figure 12. Normalized gate threshold voltage
(norm)
V
GS(th)
1.10
1.00
0.40
0.30
0.90
0.80
0.70
V
E
0.60
0.50
(V)
(µJ)
12
10
3.0
2.5
GS
oss
4.0
2.0
1.0
3.5
1.5
0.5
6
4
2
8
0
-100
0
0
0
Gate charge vs gate-source voltage Figure 9.
vs temperature
V
-50
DS
50
10
0
100
V
DD
I
D
=200V
=17A
20
50
150
100
30
200
150
V
GS
Q
Doc ID 16785 Rev 2
g
T
AM05556v1
(nC)
AM05552v1
AM05554v1
V
J
(°C)
0
DS
200
100
150
50
(V)
Figure 11. Capacitance variations
Figure 13. Normalized on resistance vs
R
(norm)
R
DS(on)
DS(on)
1000
0.14
0.12
0.11
(pF)
0.13
0.10
(Ω)
100
2.5
0.5
C
2.0
1.5
1.0
10
0.1
-100
Static drain-source on resistance
temperature
-50
5
1
0
Electrical characteristics
10
10
50
100
15
100
150
I
D
V
T
(A)
DS
AM05553v1
AM05555v1
AM05557v1
J
(°C)
(V)
Coss
Crss
Ciss
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