IXTH76N25T IXYS, IXTH76N25T Datasheet

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IXTH76N25T

Manufacturer Part Number
IXTH76N25T
Description
MOSFET N-CH 250V 76A TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXTH76N25T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
39 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
76A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
92nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.039 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
76 A
Power Dissipation
460 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
76
Rds(on), Max, Tj=25°c, (?)
0.039
Ciss, Typ, (pf)
4920
Qg, Typ, (nc)
92
Trr, Typ, (ns)
148
Trr, Max, (ns)
-
Pd, (w)
460
Rthjc, Max, (k/w)
0.27
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Trench Gate
Power MOSFET
N-Channel Enhancement Mode
TO-263 (IXTA)
Symbol
V
V
V
I
I
I
E
P
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2007 IXYS CORPORATION, All rights reserved
D25
DM
AS
GSS
DSS
J
JM
stg
L
C
DSS
DGR
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C unless otherwise specified)
G
Test Conditions
T
T
Transient
T
T
T
T
T
1.6mm (0.062in.) from case for 10s
Plastic body for 10seconds
Mounting Torque TO-220,TO-3P,TO247
Mounting Force TO-262,TO-263
V
V
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
= 0V, I
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
GS
DSS
(TAB)
, I
*
D
D
D
D
= 1mA
= 10A
= 1mA
= 0.5 • I
DS
= 0V
TO-247 (IXTH)
D25
GS
G
, Note 1
TO-262,TO-263
TO-220
TO-3P
TO-247
= 1MΩ
D
Preliminary Technical Information
S
T
IXTA76N25T IXTH76N25T
IXTI76N25T IXTP76N25T
IXTQ76N25T
J
= 125°C
JM
10..65 / 2.2..14.6
(TAB)
Characteristic Values
-55 ... +150
-55 ... +150
250
Min.
Maximum Ratings
1.13 / 10
3
± 30
250
250
170
460
150
300
260
2.5
3.0
5.5
6.0
Typ .
1.5
300
76
TO-262 (IXTI)
8
G
D
± 100 nA
S
Max.
Nm/lb.in.
200 μA
39 mΩ
5
2 μA
N/lb.
°C
°C
°C
°C
°C
W
V
V
V
A
A
A
V
V
g
g
g
g
J
(TAB)
V
I
R
Typical avalanche BV = 300V
G = Gate
S = Source
Features
Advantages
Applications
D25
Avalanche rated
International standard packages
Low package inductance
- easy to drive and to protect
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Uninterruptible power supplies
High speed power switching
applications
Easy to mount
Space savings
High power density
DS(on)
DSS
TO-220 (IXTP)
TO-3P (IXTQ)
G
D
=
=
≤ ≤ ≤ ≤ ≤
G
S
D S
D = Drain
TAB = Drain
250V
76A
39mΩ Ω Ω Ω Ω
DS99663C(10/07)
(TAB)
(TAB)

Related parts for IXTH76N25T

IXTH76N25T Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T TO-262 (IXTI) G (TAB Maximum Ratings 250 = 1MΩ 250 GS ± 170 JM 8 1.5 460 -55 ... +150 150 -55 ... +150 300 260 1 ...

Page 2

... D D25 25A 28 DSS D 21 0.50 0.21 Characteristic Values Min. Typ. JM 148 21 1.6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA76N25T IXTH76N25T Max 0.27 °C /W °C W °C W Max 200 A 1 μC 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 ...

Page 3

... L 19.81 20.32 .780 .800 L1 4.50 .177 ∅P 3.55 3.65 .140 .144 Q 5.89 6.40 0.232 0.252 R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC IXTA76N25T IXTH76N25T TO-220 (IXTP) Outline Pins Gate 2 - Drain TO-3P (IXTQ) Outline ...

Page 4

... Value 125º 25º 100 120 140 160 180 IXTA76N25T IXTH76N25T Fig. 2. Extended Output Characteristics @ 25º 10V Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = 10V 76A D -50 - Degrees Centigrade J Fig ...

Page 5

... V - Volts DS © 2007 IXYS CORPORATION, All rights reserved IXTI76N25T IXTP76N25T IXTQ76N25T 5.5 6.0 6.5 7 25ºC J 0.9 1.0 1.1 1.2 1.00 C iss C oss 0.10 C rss 0. IXTA76N25T IXTH76N25T Fig. 8. Transconductance 120 110 40ºC J 100 90 25º 125º 100 I - Amperes D Fig. 10. Gate Charge ...

Page 6

... IXTI76N25T IXTP76N25T IXTQ76N25T = 3.3 Ω 15V 125V 105 115 125 38A 76A d(off) = 15V 125V IXTA76N25T IXTH76N25T Fig. 14. Resistive Turn-on Rise Time vs. Drain Current 3.3 Ω 15V 125V Amperes D Fig. 16. Resistive Turn-off Switching Times vs. Junction Temperature I = 38A 76A d(off) = 3.3 Ω 15V 125V ...

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