IXTH76N25T IXYS, IXTH76N25T Datasheet - Page 5

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IXTH76N25T

Manufacturer Part Number
IXTH76N25T
Description
MOSFET N-CH 250V 76A TO-247
Manufacturer
IXYS
Datasheet

Specifications of IXTH76N25T

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
39 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
76A
Vgs(th) (max) @ Id
5V @ 1mA
Gate Charge (qg) @ Vgs
92nC @ 10V
Input Capacitance (ciss) @ Vds
4500pF @ 25V
Power - Max
460W
Mounting Type
Through Hole
Package / Case
TO-247
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.039 Ohms
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
76 A
Power Dissipation
460 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
76
Rds(on), Max, Tj=25°c, (?)
0.039
Ciss, Typ, (pf)
4920
Qg, Typ, (nc)
92
Trr, Typ, (ns)
148
Trr, Max, (ns)
-
Pd, (w)
460
Rthjc, Max, (k/w)
0.27
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
© 2007 IXYS CORPORATION, All rights reserved
10,000
1,000
140
120
100
200
180
160
140
120
100
100
80
60
40
20
80
60
40
20
10
0
0
3.5
0.4
0
f = 1 MHz
0.5
4.0
5
Fig. 9. Forward Voltage Drop of
0.6
10
T
Fig. 7. Input Admittance
4.5
J
Fig. 11. Capacitance
= 125ºC
Intrinsic Diode
- 40ºC
25ºC
0.7
15
V
V
V
GS
T
SD
5.0
DS
J
= 125ºC
- Volts
- Volts
- Volts
0.8
20
C oss
C iss
C rss
5.5
0.9
25
6.0
T
1.0
J
30
= 25ºC
6.5
1.1
35
7.0
1.2
40
IXTI76N25T IXTP76N25T IXTQ76N25T
1.00
0.10
0.01
120
110
100
90
80
70
60
50
40
30
20
10
10
0.0001
0
9
8
7
6
5
4
3
2
1
0
0
0
V
I
I
D
G
DS
10
20
= 25A
= 10mA
Fig. 12. Maximum Transient Thermal
= 125V
0.001
20
40
Fig. 8. Transconductance
IXTA76N25T IXTH76N25T
30
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
60
G
- NanoCoulombs
I
0.01
D
40
Impedance
- Amperes
80
T
J
= - 40ºC
50
125ºC
25ºC
100
0.1
60
120
70
140
80
1
160
90
10
100
180

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