IXTH76N25T IXYS, IXTH76N25T Datasheet - Page 3

• Manufacturer Part Number: IXTH76N25T
• Description: MOSFET N-CH 250V 76A TO-247
• Manufacturer: IXYS

Specifications of IXTH76N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 76A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 76 A
• Power Dissipation: 460 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 76
• Rds(on), Max, Tj=25°c, (?): 0.039
• Ciss, Typ, (pf): 4920
• Qg, Typ, (nc): 92
• Trr, Typ, (ns): 148
• Trr, Max, (ns): -
• Pd, (w): 460
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS CORPORATION, All rights reserved
TO-263 (IXTA) Outline
Leaded 262 (IXTI) Outline
TO-247 (IXTH) Outline
Terminals: 1 - Gate
1
3 - Source
2
3
e
2 - Drain
Tab - Drain
∅ P
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Millimeter
4.7
2.2
2.2
1.0
.4
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
5.3
2.6
1.4
.8
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
IXTI76N25T IXTP76N25T IXTQ76N25T
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
IXTA76N25T IXTH76N25T
TO-3P (IXTQ) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate
2 - Drain