IXTH76N25T IXYS, IXTH76N25T Datasheet - Page 2

• Manufacturer Part Number: IXTH76N25T
• Description: MOSFET N-CH 250V 76A TO-247
• Manufacturer: IXYS

Specifications of IXTH76N25T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 39 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 76A
• Vgs(th) (max) @ Id: 5V @ 1mA
• Gate Charge (qg) @ Vgs: 92nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.039 Ohms
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 76 A
• Power Dissipation: 460 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 250
• Id(cont), Tc=25°c, (a): 76
• Rds(on), Max, Tj=25°c, (?): 0.039
• Ciss, Typ, (pf): 4920
• Qg, Typ, (nc): 92
• Trr, Typ, (ns): 148
• Trr, Max, (ns): -
• Pd, (w): 460
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
IXYS MOSFETs and IGBTs are covered
by one or moreof the following U.S. patents: 4,850,072
I
(T
(T
S
SM
d(on)
r
d(off)
f
rr
RM
IXYS reserves the right to change limits, test conditions, and dimensions.
fs
SD
iss
oss
rss
thJC
thCH
g(on)
gs
gd
RM
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
Notes: 1:
J
J
= 25°C unless otherwise specified)
= 25°C unless otherwise specified)
*
: Current may be limited by external lead limit.
Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
Test Conditions
V
V
Resistive Switching Times
V
R
V
TO-220
TO-3P, TO-247
Test Conditions
V
Repetitive, pulse width limited by T
I
I
V
F
F
GS
R
DS
GS
G
GS
GS
= 38A, -di/dt = 250A/μs
= I
= 100V, V
PRELIMINARY TECHNICAL INFORMATION
= 10V, I
= 10V, V
= 0V, V
= 0V
= 3.3Ω (External)
= 15V, V
S
, V
GS
= 0V, Note 1
D
DS
DS
= 0.5 • I
GS
DS
= 25V, f = 1MHz
= 0.5 • V
= 0V
4,835,592
4,881,106
= 0.5 • V
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 25A
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
43
Characteristic Values
Characteristic Values
4500
148
Typ.
Typ.
0.50
0.21
1.6
480
21
6,162,665
6,259,123 B1
6,306,728 B1
46
22
25
56
29
92
28
21
72
IXTI76N25T IXTP76N25T IXTQ76N25T
Max.
0.27 °C /W
200
1.5
Max.
6,404,065 B1
6,534,343
6,583,505
76
°C W
°C W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
IXTA76N25T IXTH76N25T
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2